Business Wire IndiaToshiba Electronic Devices & Storage Corporation (“Toshiba”) has released “TCK421G” for 20V power lines as the first product in its new “TCK42xG Series” of MOSFET gate driver ICs. Devices in the series are dedicated to gate voltage control of an external N-channel MOSFET, based on input voltage, and have an overvoltage lockout function. Volume shipments start today.
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Toshiba: a new MOSFET gate driver IC TCK421G that will help to reduce device footprints. (Graphic: Business Wire)
TCK421G is suitable for configuring power multiplexer circuits or load switch circuits equipped with reverse-current blocking, in combination with a back-to-back connection of external N-channel MOSFETs. It incorporates a charge pump circuit that supports a wide range of input voltages, from 2.7V to 28V, and supplies stable voltage to the gate-source voltage of external MOSFETs with its intermittent operation. This allows switching of large currents.
Housed in a WCSP6G package, one of the smallest in the industry, TCK421G realizes high density mounting in small devices, such as wearable devices and smartphones, helping to reduce their footprint.
Toshiba will continue to develop the TCK42xG Series and plans to introduce six versions in all. The overvoltage lockout of TCK42xG Series will support an input voltage of 5V to 24V. Two types of gate output voltage, 5.6V and 10V, will be made available, for different gate-source voltages in the external MOSFETs. The overvoltage lockout and gate output voltage can be selected, according to the user’s device.
 1.2mm x 0.8mm
 Among MOSFET gate driver ICs. Toshiba survey, as of February 2022.
Notebook PCs, tablets
Storage equipment, etc.
Features of the new series
Gate-source voltage setting (5.6V, 10V) depending on input voltage with a built-in charge pump circuit
Overvoltage lockout supports 5V to 24V
Low input OFF current: IQ(OFF)= 0.5μA (max) @VIN=5V, Ta= -40 to 85°C
(Unless otherwise specified, Ta=25°C)
Input voltage VIN (V)
@Ta= -40 to 85°C
2.7 to 28
VINUVLO threshold, Vout falling
VIN_UVLO typ./max (V)
@Ta= -40 to 85°C for VIN_UVLO max
VIN UVLO hysteresis VIN_UVhyst
VIN OVLO threshold, Vout falling
VIN_OVLO min/max (V)
@Ta= -40 to 85°C
VIN OVLO hysteresis
VIN_OVhyst typ. (V)
Input quiescent current
(ON state) 
IQ(ON) typ. (μA)
IQ(OFF) max (μA)
@VIN=5V, Ta= -40 to 85°C
@VIN=12V, Ta= -40 to 85°C
GATE Drive voltage
VGS ON time
tON typ. (ms)
VGS OFF time
tOFF typ. (μs)
OVLO VGS turn OFF time
tOVP typ. (μs)
Sample Check & Availability
 Control terminal current (ICT) is not included.
Follow the links below for more on the new product.
To check availability of the new product at online distributors, visit:
Small Signal Device Sales & Marketing Dept.
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About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
The company’s 22,000 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales now surpassing 710-billion yen (US$6.5 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
Find out more at https://toshiba.semicon-storage.com/ap-en/top.html
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